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| NTZD3156C Small Signal MOSFET 20 V, 540 mA / -20 V, -430 mA Complementary N- and P-Channel MOSFETs with Integrated Pull Up/Down Resistor and ESD Protection Features http://onsemi.com ID Max (Note 1) 540 mA * * * * * * * Leading Trench Technology for Low RDS(on) Performance High Efficiency System Performance Low Threshold Voltage Integrated G-S Resistor on Both Devices ESD Protected Gate Small Footprint 1.6 x 1.6 mm These are Pb-Free Devices V(BR)DSS N-Channel 20 V RDS(on) Max 0.55 W @ 4.5 V 0.7 W @ 2.5 V 0.9 W @ 1.8 V 0.9 W @ -4.5 V 1.2 W @ -2.5 V 2.0 W @ -1.8 V P-Channel -20 V -430 mA Applications * Load/Power Switching with Level Shift * Portable Electronic Products such as GPS, Cell Phones, DSC, PMP, Bluetooth Accessories S1 PINOUT: SOT-563 1 6 D1 MAXIMUM RATINGS (TJ = 25C unless otherwise specified) Parameter Drain-to-Source Voltage Gate-to-Source Voltage N-Channel Continuous Drain Current (Note 1) P-Channel Continuous Drain Current (Note 1) Power Dissipation (Note 1) Pulsed Drain Current Steady State tv5s Steady State tv5s Steady State tv5s N-Channel P-Channel tp = 10 ms IDM TJ, TSTG IS TL TA = 25C TA = 85C TA = 25C TA = 25C TA = 85C TA = 25C TA = 25C PD 280 1500 -750 -55 to 150 350 260 mA C mA C ID Symbol VDSS VGS Value 20 6 540 390 570 -430 -310 -455 250 mW mA 6 1 SOT-563-6 CASE 463A STYLE 9 ZC M G Unit V V D2 3 Top View 4 S2 G1 2 5 G2 MARKING DIAGRAM ZC M G G = Specific Device Code = Date Code = Pb-Free Package (Note: Microdot may be in either location) Operating Junction and Storage Temperature Source Current (Body Diode) Lead Temperature for Soldering Purposes (1/8" from case for 10 s) ORDERING INFORMATION Device NTZD3156CT1G NTZD3156CT2G NTZD3156CT5G Package SOT-563 SOT-563 SOT-563 Shipping 4000 / Tape & Reel 4000 / Tape & Reel 8000 / Tape & Reel Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Surface-mounted on FR4 board using 1 in sq. pad size (Cu area = 1.127 in sq [1 oz] including traces). For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. (c) Semiconductor Components Industries, LLC, 2008 September, 2008 - Rev. 0 1 Publication Order Number: NTZD3156C/D NTZD3156C Thermal Resistance Ratings Parameter Junction-to-Ambient - Steady State (Note 2) Junction-to-Ambient - t = 5 s (Note 2) Symbol RqJA Max 116 304 Unit C/W 2. Surface mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces). ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise specified) Parameter OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage V(BR)DSS V(BR)DSS/TJ IDSS N P N P Gate-to-Source Leakage Current IGSS N P ON CHARACTERISTICS (Note 3) Gate Threshold Voltage VGS(TH) VGS(TH)/TJ RDS(on) N P N P N P Forward Transconductance gFS N P CHARGES, CAPACITANCES AND GATE RESISTANCE Input Capacitance Output Capacitance Reverse Transfer Capacitance Input Capacitance Output Capacitance Reverse Transfer Capacitance CISS COSS CRSS CISS COSS CRSS P f = 1 MHz, VGS = 0 V VDS = -16 V N f = 1 MHz, VGS = 0 V VDS = 16 V 72 13 10 93 15 11 pF VGS = 4.5 V, ID = 540 mA VGS = -4.5V, ID = -430 mA VGS = 2.5 V, ID = 500 mA VGS = -2.5V, ID = -300 mA VGS = 1.8 V, ID = 350 mA VGS = -1.8V, ID = -150 mA VDS = 10 V, ID = 540 mA VDS = -10 V, ID = -430 mA N P Gate Threshold Temperature Coefficient Drain-to-Source On Resistance VGS = VDS ID = 250 mA ID = -250 mA 0.45 -0.45 2.0 0.19 0.39 0.26 0.53 0.36 0.72 1.46 1.18 0.55 0.9 0.7 1.2 0.9 2.0 S W 1.0 -1.0 -mV/C V VGS = 0 V, VDS = 16 V VGS = 0 V, VDS= -16 V VGS = 0 V, VDS = 16 V VGS = 0 V, VDS= - 16V VDS = 0 V, VGS = 4.5 V TJ = 125C TJ = 25C N P Drain-to-Source Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current VGS = 0 V ID = 250 mA ID = -250 mA 20 -20 20 1.0 -1.0 2.0 -5.0 $50 $50 mA mA mV/C mA V Symbol N/P Test Condition Min Typ Max Unit 3. Pulse Test: pulse width v300 ms, duty cycle v2% http://onsemi.com 2 NTZD3156C ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise specified) Parameter Symbol N/P Test Condition Min Typ Max Unit CHARGES, CAPACITANCES AND GATE RESISTANCE Total Gate Charge Threshold Gate Charge Gate-to-Source Charge Gate-to-Drain Charge Total Gate Charge Threshold Gate Charge Gate-to-Source Charge Gate-to-Drain Charge QG(TOT) QG(TH) QGS QGD QG(TOT) QG(TH) QGS QGD td(ON) tr td(OFF) tf td(ON) tr td(OFF) tf VSD N P N P Reverse Recovery Time tRR N P IS = 350 mA IS = -350 mA IS = 350 mA IS = -350 mA IS = 350 mA IS = -350 mA P VGS = -4.5 V, VDD = -10 V, ID = -430 mA, RG = 10 W N VGS = 4.5 V, VDD = 10 V, ID = 540 mA, RG = 10 W P VGS = -4.5 V, VDS = -10 V; ID = -430 mA N VGS = 4.5 V, VDS = 10 V; ID = 540 mA 1.39 0.1 0.26 0.39 1.49 0.1 0.3 0.37 2.5 nC 2.5 SWITCHING CHARACTERISTICS (VGS = V) (Note 4) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Drain-Source Diode Characteristics Forward Diode Voltage VGS = 0 V, TJ = 25C VGS = 0 V, TJ = 125C VGS = 0 V, dIS/dt = 100 A/ms 0.77 -0.77 0.65 0.63 9.4 14.6 ns 1.2 -1.2 V 7.7 5.3 21 10 9.2 6.5 29 19.5 ns 4. Switching characteristics are independent of operating junction temperatures http://onsemi.com 3 NTZD3156C N-CHANNEL TYPICAL PERFORMANCE CURVES (TJ = 25C unless otherwise noted) 1.0 0.9 ID, DRAIN CURRENT (A) 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 VGS = 1.2 V 1.6 1.8 2.0 VDS, DRAIN-TO-SOURCE VOLTAGE (V) VGS = 1.4 V 4.5V VGS = 2.5 V, 2.0 V 1.8 V TJ = 25C ID, DRAIN CURRENT (A) VGS = 1.6 V 1.2 VDS w 10 V 1.0 0.8 0.6 0.4 0.2 0 0.6 TJ = -55C 0.8 1.0 1.2 1.4 1.6 1.8 VGS, GATE-TO-SOURCE VOLTAGE (V) TJ = 125C TJ = 25C Figure 1. On-Region Characteristics RDS(on), DRAIN-TO-SOURCE CURRENT RESISTANCE (W) 0.5 RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) ID = 0.54 A TJ = 25C 0.50 0.45 0.40 0.35 0.30 0.25 0.20 0.15 0.10 0.2 Figure 2. Transfer Characteristics 0.45 0.40 0.35 0.30 0.25 0.20 0.15 0.10 1 TJ = 25C VGS = 1.8 V VGS = 2.5 V VGS = 4.5 V 3 4 5 VGS, GATE-TO-SOURCE VOLTAGE (V) 2 6 0.4 0.6 0.8 ID, DRAIN CURRENT (A) 1 Figure 3. On-Resistance versus Gate-to-Source Voltage 1.6 RDS(on), DRAIN-TO-SOURCE RESISTANCE (NORMALIZED) 1.4 1.2 1 0.8 0.6 -50 ID = 0.54 A VGS = 10 V IDSS, LEAKAGE (nA) 1000 Figure 4. On-Resistance versus Drain Current and Gate Voltage VGS = 0 V 100 TJ = 150C TJ = 125C -25 0 25 50 75 100 125 150 10 2 4 6 8 10 12 14 16 18 20 TJ, JUNCTION TEMPERATURE (C) VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 5. On-Resistance Variation with Temperature Figure 6. Drain-to-Source Leakage Current versus Voltage http://onsemi.com 4 NTZD3156C N-CHANNEL TYPICAL PERFORMANCE CURVES (TJ = 25C unless otherwise noted) VGS, GATE-TO-SOURCE VOLTAGE (V) 150 VGS = 0 V 125 C, CAPACITANCE (pF) 100 75 50 25 0 CRSS 0 5 10 15 20 DRAIN-TO-SOURCE VOLTAGE (V) COSS CISS TJ = 25C 4.5 4 3.5 3 2.5 2 1.5 1 0.5 0 0 0.2 0.4 0.6 0.8 1 ID = 0.54 A TJ = 25C 1.2 1.4 QGS QGD QT Qg, TOTAL GATE CHARGE (nC) Figure 7. Capacitance Variation Figure 8. Gate-to-Source and Drain-to-Source Voltage versus Total Charge 0.5 IS, SOURCE CURRENT (A) 100 VDD = 10 V ID = 0.54 A VGS = 4.5 V td(off) t, TIME (ns) tf 10 td(on) tr 0.4 0.3 0.2 0.1 0 VGS = 0 V TJ = 25C 1 1 10 RG, GATE RESISTANCE (W) 100 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 VSD, SOURCE-TO-DRAIN VOLTAGE (V) 0.9 Figure 9. Resistive Switching Time Variation versus Gate Resistance Figure 10. Diode Forward Voltage versus Current http://onsemi.com 5 NTZD3156C P-CHANNEL TYPICAL PERFORMANCE CURVES (TJ = 25C unless otherwise noted) 0.9 0.8 -ID, DRAIN CURRENT (A) 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 TJ = 25C VGS = -1.4 V -4.5 V -2.5 V VGS = -2.0 V VGS = -1.6 V 1.0 VGS = -1.8 V -ID, DRAIN CURRENT (A) 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 2.0 0 0.6 0.8 1.0 1.2 TJ = 125C TJ = 25C TJ = -55C 1.4 1.6 1.8 -VGS, GATE-TO-SOURCE VOLTAGE (V) VDS 10 V VGS = -1.2 V 1.6 1.8 -VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 11. On-Region Characteristics RDS(on), DRAIN-TO-SOURCE CURRENT RESISTANCE (W) 1.0 RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) 0.9 0.8 0.7 0.6 0.5 0.4 0.3 1 3 4 5 VGS, GATE-TO-SOURCE VOLTAGE (V) 2 6 ID = -0.43 A TJ = 25C 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.15 Figure 12. Transfer Characteristics TJ = 25C VGS = -1.8 V VGS = -2.5 V VGS = -4.5 V 0.25 0.35 0.45 0.55 -ID, DRAIN CURRENT (A) 0.65 0.75 Figure 13. On-Resistance versus Gate-to-Source Voltage 1.6 RDS(on), DRAIN-TO-SOURCE RESISTANCE (NORMALIZED) 1.4 1.2 1 0.8 0.6 -50 ID = -0.43 A VGS = -4.5 V -IDSS, LEAKAGE (nA) 1000 Figure 14. On-Resistance versus Drain Current and Gate Voltage VGS = 0 V TJ = 150C 100 TJ = 125C -25 0 25 50 75 100 125 150 10 5 10 14 20 TJ, JUNCTION TEMPERATURE (C) -VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 15. On-Resistance Variation with Temperature Figure 16. Drain-to-Source Leakage Current versus Voltage http://onsemi.com 6 NTZD3156C P-CHANNEL TYPICAL PERFORMANCE CURVES (TJ = 25C unless otherwise noted) -VGS, GATE-TO-SOURCE VOLTAGE (V) 150 VGS = 0 V 125 C, CAPACITANCE (pF) CISS 100 75 50 25 0 CRSS 0 5 10 15 20 COSS TJ = 25C 4.5 4 3.5 3 2.5 2 1.5 1 0.5 0 0 0.2 0.4 0.6 0.8 1 ID = -0.43 A TJ = 25C 1.2 1.4 1.6 QGS QGD QT DRAIN-TO-SOURCE VOLTAGE (V) Qg, TOTAL GATE CHARGE (nC) Figure 17. Capacitance Variation Figure 18. Gate-to-Source and Drain-to-Source Voltage versus Total Charge 0.5 -IS, SOURCE CURRENT (A) 100 VDD = -10 V ID = -0.44 A VGS = -4.5 V t, TIME (ns) td(off) tf td(on) tr 0.4 0.3 0.2 0.1 0 VGS = 0 V TJ = 25C 10 1 1 10 RG, GATE RESISTANCE (W) 100 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 -VSD, SOURCE-TO-DRAIN VOLTAGE (V) 0.9 Figure 19. Resistive Switching Time Variation versus Gate Resistance Figure 20. Diode Forward Voltage versus Current http://onsemi.com 7 NTZD3156C PACKAGE DIMENSIONS SOT-563, 6 LEAD CASE 463A-01 ISSUE F D -X- 6 5 4 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. DIM A b C D E e L HE MILLIMETERS MIN NOM MAX 0.50 0.55 0.60 0.17 0.22 0.27 0.08 0.12 0.18 1.50 1.60 1.70 1.10 1.20 1.30 0.5 BSC 0.10 0.20 0.30 1.50 1.60 1.70 INCHES NOM MAX 0.021 0.023 0.009 0.011 0.005 0.007 0.062 0.066 0.047 0.051 0.02 BSC 0.004 0.008 0.012 0.059 0.062 0.066 MIN 0.020 0.007 0.003 0.059 0.043 A L 1 2 3 E -Y- b HE e 5 6 PL M C XY 0.08 (0.003) SOLDERING FOOTPRINT* 0.3 0.0118 0.45 0.0177 1.35 0.0531 1.0 0.0394 STYLE 9: PIN 1. SOURCE 1 2. GATE 1 3. DRAIN 2 4. SOURCE 2 5. GATE 2 6. DRAIN 1 0.5 0.5 0.0197 0.0197 SCALE 20:1 mm inches *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81-3-5773-3850 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative http://onsemi.com 8 NTZD3156C/D |
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